Inductively coupled plasma deposited amorphous silicon alloys using industrial equipment for heterojunction silicon solar cells

One of the most promising advanced solar cell designs for x :H(i) have yielded very good results compatible with high-voltage HET solar cells, with the passivation quality of a-SiO x :H(i) being consistently higher, and far less sensitive to the deposition temperature compared to a-Si:H(i). In fact, a-SiO x :H(i) has a stable process window of more than 200°C that is suitable for the production environment. The wider process window can be attributed to suppressed epitaxial growth and incubation layer thickness in the a-SiO x :H(i) layer at high deposition temperatures.