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Impact of Single Event Gate Rupture and latent defects on Power MOSFETs switching operation
Impact of Single Event Gate Rupture and latent defects on Power MOSFETs switching operation
2013
A. Privat
Antoine Touboul
M. Petit
J.-J. Huselstein
Frédéric Wrobel
F. Forest
J.-R. Vaillé
S. Bourdarie
Richard Arinero
N. Chatry
G. Chaumont
Eric Lorfevre
Frédéric Saigne
Keywords:
Electronic engineering
Power MOSFET
Materials science
Optoelectronics
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