MOCVD-grown HgCdTe photodiodes optimized for HOT conditions and a wide IR range

Abstract In this paper we present the recent progress in the fabrication of high-operating temperature HgCdTe photodiodes grown by metal organic chemical vapor deposition on GaAs substrates. Analyzed photodiodes were optimized for a different spectral range. The optical and electrical performance was comparable to the state-of-the-art of HgCdTe detectors. Dark current densities are close to the values given by "Rule 07" and detectivities reach the BLIP conditions.