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Highly strained oxide confined InGaAs VCSELs emitting in the 1.3 im regions
Highly strained oxide confined InGaAs VCSELs emitting in the 1.3 im regions
2004
Hsin-Chieh Yu
Shoou-Jinn Chang
Yan-Kuin Su
I.-L. Chen
T. D. Lee
C-M Lu
C. H. Chiou
Zheng-Hong Lee
J.M. Wang
Chia-Pin Sung
Keywords:
Oxide
Optoelectronics
Materials science
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