1/f Noise in GaAs MESFETs

Chung–Yi Su,H. Rohdin,C. Stolte

1/f Noise in GaAs MESFETs

1983

Chung–Yi Su
H. Rohdin
C. Stolte

The origin of low frequency noise in GaAs MESFETs was experimentally investigated. Traps in a depletion region of the MESFET were found to be primarily responsible for the low frequency noise. The observed dependence of the low frequency noise on the gate length supports this conclusion.

Keywords:

MESFET
Noise generator
Optoelectronics
Phase noise
Electronic engineering
Physics
Noise-figure meter
Flicker noise
Noise temperature
Burst noise
Noise (electronics)
Shot noise

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