A new methodology for developing a fast two-dimensional MOSFET device simulator

Abstract A new efficient computation scheme using both analytical and numerical techniques has been developed and implemented in a SUbMicron MOS (SUMMOS) simulator. The main features of the proposed scheme are: (1) an efficient grid-partition method and an accurate initial guess technique for the Newton-like method are generated by the developed analytical model through solving the two-dimensional Possion's equation; (2) the accurate source and drain boundary potentials used in the analytical model for a MOSFET with the complicated device structure are provided by a simple model and further refined by a self-improved feedback technique. Comparisons between the initial guess using the analytical model and the final solution are analyzed. In addition, comparisons between the new scheme and the conventional algorithm using the continuation method is made via the number of Newton-iteration and the CPU time, and the superior performance of the new computation scheme is observed. Moreover, it is demonstrated that the SUMMOS simulator with the proposed computation scheme can provide efficient numerical simulation for MOSFET's in CMOS/VLSI.