Characterization and modification of Fe thin film deposited on SiO 2 /Si(001)

We present here the investigations of the stability of Fe thin film under the external conditions such as annealing. Fe/SiO 2 /Si(001) was prepared by the thermal evaporation method and then annealed at 600 °C for 90s. The properties of the film were studied by X-ray reflectometry (XRR), Rutherford backscattering spectrometry (RBS), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The obtained results show that annealing leads to formation of grain-structured surface.