Transient photoconductive response of InP:Fe

We present experimental transient response data for iron‐doped indium phosphide (InP:Fe) photoconductors subject to impulse and rectangular‐pulse excitation over a wide range of excitation intensities. The detector response shape is observed to depend strongly on the excitation intensity. We present a model for bulk‐material response based on the dynamics of electron and hole trapping and recombination on the deep‐level iron impurities. The model qualitatively reproduces the observed experimental behavior.