Femtosecond carrier dynamics in InGaN multiple-quantum-well laser diodes under high injection levels

The carrier dynamics of an InGaN multiple-quantum-well (MQW) laser diode under the high current injection level is examined using time-resolved pump-probe measurements. Subpicosecond intersubband hole relaxation and hole heating processes are found to dominate carrier dynamics responses, different from GaAs and InP based laser diodes.