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Electric Field Driven Degradation of AlGaN/GaN High Electron Mobility Transistors during Off-State Stress
Electric Field Driven Degradation of AlGaN/GaN High Electron Mobility Transistors during Off-State Stress
2011
C. Y. Chang
E. A. Douglas
Jinhyung Kim
Lu Liu
Chien-Fong Lo
Byung Hwan Chu
D. J. Cheney
B. P. Gila
F. Ren
G. D. Via
David A. Cullen
Lin Zhou
David J. Smith
Soohwan Jang
S. J. Pearton
Keywords:
Electron mobility
Nuclear magnetic resonance
Transistor
Electric field
Materials science
high electron
Degradation (geology)
Optoelectronics
algan gan
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