An Internally-matched GaN HEMT Amplifier with 550-watt Peak Power at 3.5 GHz

A high-power amplifier using two 28.8-mm-periphery GaN HEMTs was demonstrated with all matching components inside the package. When biased at 55 V, a power bandwidth of 3.3-3.6 GHz was obtained, with 550-W peak output, 12.5-dB associated gain and 66% drain efficiency at 3.45 GHz.