Parametric study of aluminum nitride Lamb wave resonators

In this paper, we propose a parametric study of aluminum nitride Lamb wave resonators. A Film Bulk Acoustic Resonator (FBAR) technology was used and integrated on a 200 mm silicon substrates process flow performed on a standard CMOS fabrication line. Experimental results show that frequency is defined mostly by the period of interdigitated electrodes, but also by a competing contribution of membrane width.