Multiple quantum well InGaN/GaN blue optically pumped lasers operating in the spectral range of 450-470 nm

Lasing under optical pumping by N 2 -laser radiation in InGaN/GaN multiple quantum well heterostructures grown in AIXTRON MOVPE reactors was achieved and investigated in the wavelength range of 450-470 nm. The laser operation wavelength depends most strongly on V/III ratio during quantum well barrier growth. The total energy and power per pulse of the laser were 300 nJ and 40 W, respectively, with differential quantum efficiency of 3% at room temperature. The laser threshold increases exponentially with increasing operation wavelength which is mainly due to the decreasing efficiency of the spontaneous emission and due to an increase of its spectral width.