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Illumination Condition and Mask Bias for 0.18 mm Pattern with KrF Lithography
Illumination Condition and Mask Bias for 0.18 mm Pattern with KrF Lithography
1998
H Tabuchi
Y. Shichijo
I. Okabe
N. Oka
M. Inoue
K. Iguchi
Keywords:
Optics
Lithography
Materials science
Correction
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