Pulsed Ion-Beam Treatment of Germanium Implanted by Antimony Ions

Ge layers heavily doped by a donor impurity are formed by implanting a p-Ge single crystal by two-charge antimony ions (Sb++) with the energy E = 80 keV and the dose Φ = 1016 cm−2 with subsequent pulsed annealing of the implanted Ge:Sb layer by powerful ion beams (C+, H+) of nanosecond duration in a liquid phase regime. The surface morphology and depth profiles of Sb, the crystalline structure of the layer, the concentration of electrically active atoms, and photoluminescence of the Ge:Sb layers are investigated. The data on the Sb depth distribution are compared with the computer simulation results and show good agreement. The obtained results indicate that a high degree of activation of the implanted Sb (up to 100%) and an increase in the direct-gap photoluminescence in the heavily doped layer for 300 K with a peak at 0.77 eV.