First Principles Design of High Hole Mobility p-Type Sn–O–X Ternary Oxides: Valence Orbital Engineering of Sn2+ in Sn2+–O–X by Selection of Appropriate Elements X

The development of high-performance p-type oxides with good hole mobilities is critical for the application of metal–oxide semiconductors in back-end-of-line complementary metal–oxide semiconductor...