Development of high-k dielectric for antimonides and a sub 350°C III–V pMOSFET outperforming Germanium

In x Ga 1−x Sb pMOSFETs with SS of 120mV/decade, I ON /I OFF >10 4 and Gm,max of 140/90 mS/mm (L G =5µm), fabricated using a self-aligned gate-first process are demonstrated for the first time. Table 2, summarizes the key transistor results. ALD Al 2 O 3 with Dit of 3×10 11 /cm 2 eV and strain engineering has enabled a high-mobility In x Ga 1−x Sb pMOSFET an important step toward the implementation of III–V CMOS in future technology nodes.