Structure and Properties of Radio-frequency Magnetron Sputtered La Doped BaSnO 3 Thin Films on 7059 Glass

The perovskite oxide BaSnO 3 (BTO) is an insulating material with a bandgap of 4 eV, while the La doped BaSnO 3 with high carrier concentration is a conductive oxide. The electronic band structure of BTO was calculated based on density functional theory (DFT) and the La-doped BaSnO 3 (BLTO) thin films were deposited by the magnetron sputtering technique on the 7059 glass at high temperature. The structural, electronic and optical properties of BLTO have been investigated. The experimental results show that BLTO thin film has a preferred orientation (0 1 1). The structure and band gap of the BLTO thin film can be tuned by increasing temperature. The Hall measurements indicated that BLTO films are n-type conductors and the carrier concentration and mobility of BLTO thin film deposited at 730°C are about 1.3×10 18 cm –3 and 8.2 cm 2 V –1 s –1 , respectively. The resistivity was ~0.6 Ωcm.