High-efficiency, high-power diode laser chips, bars, and stacks

Leveraging improvements to device structures and cooling technologies, ultra-high-power bars have been integrated into multi-bar stacks to obtain CW power densities in excess of 2.8 kW/cm 2 near 960 nm with spectral widths of 37 W CW have been obtained from 5-emitter devices on standard CuW CT heatsinks with AuSn solder. Near 808 nm, a PCE of 65% with a slope efficiency of 1.29 W/A has been demonstrated with a 20%-fill-factor, 2-mm-cavity-length bar.