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Raised source-drain transistors in a cell and support area with co-silicide for 88-nm DRAM technology and beyond
Raised source-drain transistors in a cell and support area with co-silicide for 88-nm DRAM technology and beyond
2004
Youngmin Choi
Ju-youn Kim
Myung Yung Jeong
H.-J. Kim
Hyun-Su Kim
Sung-Gi Kim
Byung-lyul Park
I. B. Chung
Doo-gon Kim
J. W. Lee
H. K. Hwang
Yoo-Sang Hwang
Duhyun Hwang
Joonseok Park
Mi-Jeong Jo
Duk-Hwan Kim
N. J. Kang
Young-rae Park
Kinam Kim
Keywords:
Nuclear magnetic resonance
Physics
Transistor
Silicide
Electronic engineering
Dram
Optoelectronics
Condensed matter physics
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