Preparation lateral pin structure Ge photodetector

Preparation Ge lateral pin structure in the photodetector, to a germanium photodetector. 1) epitaxially growing a single crystal germanium substrate layer, a cover layer regrown on SiO2 germanium layer; 2) a microelectronic photolithographic technique utilizing mesa etched in the active region of the elongate strip on a monocrystalline germanium epitaxial layer; 3) single crystal germanium layer above the mask made of SiO2 coating layer, a large lateral deflection angle by ion implantation to form a doped p region and n-doped regions on both sides of the mesa; Ni layer 4 after depositing a metal thermal annealing) using NiGe , when the self-alignment process is formed NiSi formed at the bottom and sides of the mesa etching region NiGe and NiSi contact electrodes; 5) extraction device electrodes, the protective passivation layer to obtain lateral pin structure Ge photodetector. Process is simple, easy to operate, great value.