The effect of In content on high-density InxGa1-xAs quantum dots

Abstract We have successfully grown self-assembled In x Ga 1− x As ( x = 0.44 , 0.47, 0.50) quantum dots (QDs) with high density (>10 11 /cm 2 ) by MBE. The effect of In content on the high-density QD is investigated by atomic force microscopy (AFM) and photoluminescence (PL) spectra. It is found that sample with In-mole-fraction of 0.5 shows small size fluctuation and high PL intensity. The influence of growth temperature on high-density QD is also investigated in our experiment.