Zn dopant analysis in GaAs

Abstract A trace amount of Zn in Zn-doped GaAs was analyzed with high sensitivity and accuracy by PIXE, i.e. 300 ppm with a detection limit of 20 ppm. For this purpose an absorber made of both Cu and Ga was used. A method subtracting a PIXE spectrum emitted from dopant-free GaAs from that of Zn-doped GaAs was useful for significant improvements in the reliability of the PIXE analysis.