Old Web
English
Sign In
Acemap
>
Paper
>
High efficiency Luminescence of nitride semiconductors with InGaN/GaN quantum wells by SiO 2 thin films
High efficiency Luminescence of nitride semiconductors with InGaN/GaN quantum wells by SiO 2 thin films
2021
Seiya Kaito
Shimanoe Kohei
Matsuyama Tetsuya
Wada Kenji
Funato Mitsuru
Kawakami Yoichi
Okamoto Koichi
Keywords:
Quantum well
Thin film
Materials science
nitride semiconductors
Luminescence
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]