Electrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face 4H-SiC/SiO2 interfaces

We investigated interface defects formed on a-face and m-face 4H-SiC/SiO2 interfaces after interface nitridation by nitric oxide (NO) post-oxidation annealing (POA). Using electrically detected mag...