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43nmCMOS技術を用いた120mm^2 16Gb多値NANDフラッシュメモリの開発(メモリ技術(DRAM,SRAM,フラッシュ,新規メモリー))
43nmCMOS技術を用いた120mm^2 16Gb多値NANDフラッシュメモリの開発(メモリ技術(DRAM,SRAM,フラッシュ,新規メモリー))
2008
dai nakamura
kazusige kanda
kati oyanagi
tosio sanson
kouzi hosono
masahiro yosihara
tooru miwa
yousuke katou
Alex Mak
Siu Lung Chan
Frank Tsai
Raul Adrian Cernea
Binh Le
eiiti makino
takasi taira
hiroyuki ootake
nori bun kazimura
susumu fuzimura
yosiaki takeuti
mikihiko itou
masanobu sirakawa
yuuya suzuki
yuuki okukawa
masatugu kozima
waei kometani
takasi rin arizono
syun ki hisada
susumu zi miyamoto
mituhiro noguti
tositake yaegasi
masaaki azumaya
fumitosi itou
teruhiko kamei
tooru maruyama
kazumi i nou
sigeo oosima
Keywords:
CMOS
Electronic engineering
Static random-access memory
Computer science
Dram
Embedded system
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