Optimum laser-produced plasma for extreme ultraviolet light source

The optimum plasma conditions of extreme ultraviolet (EUV) light source for lithography were experimentally clarified that is optically thin and minimum mass Sn plasma generated from a limited size target. Sn plasma is quite opaque for EUV light of 13.5 nm in wavelength, therefore 13.5 nm light emitted from deep within a Sn plasma is strongly absorbed, thus optically thin plasma production is essential for efficient EUV generation. Contamination of EUV optics caused by debris emanated from laser irradiated Sn targets is a serious problem in the Sn based EUV source system. Target residue around the laser spot is the dominant source of neutral debris, which can be reduced with supplying the minimum mass target containing the minimum number of Sn atoms required for sufficient EUV generation. Spectral purity of generated EUV light is an important requirement to expose clear mask image on a photo-resist film without chromatism. Out-of-band radiation in the vacuum ultraviolet range is dominantly radiated from the laser spot peripheral. Target size must be equal to the laser spot size to suppress the out-of-band radiation.