Phase change memory cell and method for fabricating a phase change memory cell

An interface material having a low resistance is provided between a self-aligned vertical heating element and a contact region of a selection device. A phase change chalcogenide material is deposited directly on the vertical heating element. In one embodiment, the vertical heating element is L-shaped, has a curved vertical wall along the word line direction, and a horizontal base. In one embodiment, the interface material is deposited with a low resistance in a trench having a negative profile using a PVD technique. An upper surface of the low resistance interface material may have a beveled extension bird's beak.