Sub-milliampere single-quantum-well InGaAs-GaAs-AlGaAs addressable laser arrays

Strained-quantum-well InGaAs-GaAs-AlGaAs lasers and laser arrays with record low threshold currents of 0.6 mA for cleaved devices and 0.145 mA for high-reflectivity facet-coated devices are fabricated by single-step growth on nonplanar substrates by metalorganic chemical vapor deposition. These laser arrays have high quantum efficiency, low internal loss, and high uniformity because of the one-step growth and simplified processing procedures. >