Continuous‐wave laser doping of micrometer‐sized features in gallium arsenide using a dimethylzinc ambient

We present a single‐step process for the direct writing of micron‐scale Zn‐doped regions on GaAs substrates. A focused continuous‐wave Ar+ laser drives both pyrolysis of the dimethylzinc source gas and solid‐state diffusion of the Zn atoms into the GaAs. Secondary ion mass spectroscopy (SIMS) has been used to measure the dopant depth profiles as a function of laser‐induced temperature. Raman microprobe spectroscopy has been used to corroborate the SIMS measurements and measure the lateral extent of micron‐sized doped lines. In a preliminary measurement of electrical activation, Al contacts to n‐GaAs have been modified using the process.