Connection method for manufacturing an integrated circuit device has semiconductor in particular having a mitset

THE INVENTION CONCERNS A PROCESS FOR PRODUCING AN INTEGRATED CIRCUIT DEVICE SEMICONDUCTOR. THE METHOD IS FORMING ON A SEMICONDUCTOR SUBSTRATE 1, CONDUCTIVE LAYER FORMED 9 D A LAYER OF POLYCRYSTALLINE SILICON 9A and 9B LAYER LOCATED ON THE PREVIOUS AND METAL CONTAINING REFRACTORY HIGH POINT FUSION FORMING A FIRST FILM COVERING 11 COVERING LAYER AND THICKNESS 9 REDUCING POWER flaking 9B THE FILM FROM THE LAYER 9A, AND FORMING A SECOND FILM fORMED GLASS INSULATION 12 phosphosilicate THE FIRST FILM INSULATION 11 EC phosphosilicate glass BEING WAY WHEN HEATED If eLAPSE WAS LODGED. APPLICATION ESPECIALLY MAKING MEMORIES DYNAMIC DIRECT ACCESS.