Characterization of dopant diffusion, mobility, activation and deactivation effects for n-type dopants with long-dwell laser spike annealing

N-type dopant activation by long dwell laser spike annealing, and subsequent deactivation during furnace annealing, has been studied using Hall measurements. Carrier activation is improved as the dwell time is increased from 10 to 20ms. For high concentration P junctions, deactivation is observed at temperatures as low as 400°C. However, activation can be fully recovered by a second LSA anneal suggesting that dopant-vacancy complexes formed during deactivation can be reversibly dissolved by LSA.