Dielectric metal dielectric antireflection plasmonic layers

Dielectric/Metal/Dielectric structures using Transition Metal Oxides (TMOs) as a dielectric layer and very thin-film layers of metal will be fabricated and their opto-electrical properties evaluated. In particular, MoO3/Ag/MoO3, V2O5/Ag/V2O5 and WO3/Ag/WO3 structures will be fabricated by thermal evaporation in a high vacuum process. Their optical transmittance and electrical conductivity will be measured. Optimized DMD structure will be used as a Transparent Conductive Layer in crystalline silicon solar cells.