Lasing of Injection Microdisks with InAs/InGaAs/GaAs Quantum Dots Transferred to Silicon

AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots have been transferred to the surface of a silicon wafer using an indium solder. The microlasers have a common electric contact deposited on top of the residual n+-GaAs substrate and individual addressing is ensured by placing the microdisks with the p contact down onto separate contact pads formed on silicon. No effect of a non-native substrate on the electrical, threshold, thermal, and spectral characteristics has been established. The microdisks can operate in continuous-wave regime without forced cooling at a threshold current density of ~0.7 kA/cm2. The lasing wavelength is stable (<0.1 nm/mA) to the injection current.