Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmospheric pressure growth

Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10 m/h and also Al0:1Ga0:9N growth of 1 m/h by using 4 inch by 11 production scale MOVPE are described. XRD of (002) and (102) direction was 200 arcsec and 250 arcsec, respectively. Impact of the growth rate on productivity is discussed.