Effect of postannealing on properties of ZnO-SnO2 thin film transistors

Herein, the influence of postannealing on the properties of ZnO-SnO2 (ZTO) thin-film transistors (TFTs) was investigated. Postannealing in ambient air induced recovery of the electrical properties of wet-etch-damaged TFTs and a decrease in the subthreshold swing. Also, the field effect mobility increased with increasing postannealing temperature. Further improvement of the electrical properties of ZTO TFTs was not obtained with a further increase in annealing time. After postannealing at 200 °C for 60 min in the air, the ZTO TFTs exhibited a field effect mobility of about 10 cm2/V s.