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MEASUREMENT OF BORON CONTAMINATION IN N+ SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY
MEASUREMENT OF BORON CONTAMINATION IN N+ SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY
1993
Paul K. Chu
Roger J. Bleiler
J.M. Metz
C. J. Hitzman
R. S. Hockett
Keywords:
Contamination
Radiochemistry
Boron
Secondary ion mass spectrometry
Silicon
Materials science
Correction
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