Using optical emission spectroscopy (OES) to monitor In-line very high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique optoelectrical properties

In this paper using optical emission spectroscopy (OES) to monitor In-line very high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique optoelectrical properties. In-line VHF-PECVD was developed by MIRDC (Metal Industries Research & Development Centre) in Taiwan. In-line VHF-PECVD system with an electrode distance was 15 to 50 mm and electrode area of 1681 cm2. Due to the difference between the observation port and the plasma position. Therefore, this paper developed an online VHF-PECVD internal optical system to verify the stability of the internal optical system. The OES is a non-intrusive monitoring device that is widely used for real-time monitoring and stabilization devices for plasma monitoring. This paper used OES to monitor the stability of processed silicon thin films.