BULK AND SURFACE RECOMBINATION PARAMETERS MEASUREMENT IN SILICON DOUBLE SIDED SOLAR CELL UNDER CONSTANT MONOCHROMATIC ILLUMINATION

The purpose of this work is to present a new technique for determining recombination parameters of excess minority carrier in a silicon double sided solar cell under constant monochromatic illumination. Using front or backside illumination, photocurrent density leads to new expressions of excess minority carrier back surface recombination velocities SB1 and SB2 respectively which are related to the diffusion length L. We define theoretical short circuit current densities ratio e(L) = Jsc1/Jsc2 also related to L, as calibrated function which intercept the experimental short circuit current densities ratio leading to the effective excess minority carrier diffusion length Leff. Once the effective diffusion length Leff is determined, we can then calculate effective excess minority carrier recombination velocity at the back surface of the bifacial cell based on the theoretical expressions previously determined.