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Characterization of Schottky barrier height for metal/lightly p -type doped GaN interface on vertical SBDs
Characterization of Schottky barrier height for metal/lightly p -type doped GaN interface on vertical SBDs
2021
Kohei Aoyama
Kohei Ueno
Atsushi Kobayashi
Hiroshi Fujioka
Keywords:
Doping
Materials science
Metal
Interface (computing)
Sputtering
Schottky barrier
Schottky diode
Optoelectronics
SBDS
characterization
Correction
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