Study of Carbon Thin Film Deposition on Various Buffer Layer as Characterized by X-Ray Diffraction and Raman Spectroscopy

Westudy the structural characteristic of carbon based thin filmprepared by DC unbalanced magnetron sputtering technique on different buffer layer such as γ-Al2O3, SnO2, and Cu. Sputtering parameters of carbon thin film were maintained identical for each buffer layer. Fe-doped carbon pellet and Argon gas have been used as sputtering target and to generate the sputtering plasma, respectively. The roles of buffer layer for the quality of carbon-based thin film have been investigated by X-ray diffraction and Raman spectroscopy analysis. Raman spectra indicatethe formation of agoodquality carbon thin film with crystal-like structure on γ-Al2O3and Cu buffer layer, in contrast to the SnO2buffer layer case. Furthermore Raman spectra confirm thehoneycomb structure with fewer defects in γ-Al2O3 indicating that it is more suitable buffer layer than the other. We argue that γ-Al2O3 buffer layerprovide a good nucleation site and promote a better atomic arrangement for carbon atoms to form a few layergraphene-like structure. The atomic geometry of γ-Al2O3 supports the hexagonal atomic configurationfor carbon atom inthe formation of a few layers graphene. This study mightgive a new approach for the carbon based deposition towards the devices application.