On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination
2014
This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power MOSFETs. The data show a correlation between IG gate current during irradiation and different behaviors observed during the post-irradiation test. This work addresses the relevance of the post-gate stress test used in space qualification of power MOSFETs.
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