A 0.13μm 64Mb HfO x ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement

This paper presents a 0.13μm 64Mb HfOx ReRAM for embedded storage in IoT device. The configurable ramped voltage write and low read-disturb sensing techniques are proposed to address the reliability challenges in ReRAM. Experimental results show that, the ReRAM chip achieves more than 10 7 cycles' endurance and 10 years' retention at 75°C. In addition, its full function and superior random write performance are demonstrated on a developed evaluation board.