Efficient Implementation of S/D tunneling in 2D MS-EMC of Nanoelectronic Devices Including the Thickness Dependent Effective Mass

In the contemporary and future nanoelectronic devices, quantum effects play an important role in terms of confinement and tunneling. It is necessary to include a suitable implementation of such effects in advanced simulation tools. In this work, we report on a novel implementation of direct Source-to-Drain tunneling (S/D tunneling) which has been included in our 2D Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator. The model has been validated against Non-Equilibrium Green's Function (NEGF) simulations. The effective mass variation in ultrathin channels has been calculated using density functional theory (DFT) and used in our MS-EMC simulations to study its impact on the device behavior. As a result, the quantum transport phenomena have been pragmatically implemented in MC tools.