TiO2-x films prepared by ion beam assisted deposition

Abstract TiO 2− x films were prepared by ion beam assisted deposition on an EATON Z-200 system, during which concurrent electron beam evaporation of titanium and bombardment with an inert gas ion beam were carried out in an O 2 atmosphere. Xe + and Ne + ions with different current density and incident angles were used. The films were investigated using X-ray diffraction (XRD), glancing incident X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). RBS analysis shows that the films are nearly stoichiometric. XPS measurements reveal that the surface was fully oxidized, but Ti 2+ , Ti 3+ and Ti 4+ coexist on the Ar + -sputtered surface. XRD and GIXRD analyses show that almost all the films have rutile-type structure and (2 0 0) preferred orientation. After annealing the 2 θ angle shift to higher degrees and the (2 0 0) peak intensity increases, which means better crystallization and orientation.