Preparation and investigation of MoSi2/SiC coating with high infrared emissivity at high temperature

Abstract In this study, MoSi 2 /SiC coating with high infrared emissivity was fabricated by atmospheric plasma spray (APS) method, in view of the potential application in high temperature energy-saving area. The phase composition, microstructure, infrared emissivity and thermal shock resistance of the obtained coating were characterized. Compared with MoSi 2 coating, the MoSi 2 /SiC coating exhibited a higher emissivity of 0.908 at 1400 °C, owing to the smaller band gap energy and the distortion of Mo 4.8 Si 3 C 0.6 . Moreover, high thermal shock resistance was validated, as no emissivity degradation or obvious spalling of coating was found and only a few microcracks could be observed in the surface after 50 thermal cycles with water-quenching from 1300 °C to 25 °C.