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Reduced Gate Leakage Current in N-polar GaN MIS-HEMTs
Reduced Gate Leakage Current in N-polar GaN MIS-HEMTs
2017
Kiattiwut Prasertsuk
Akinori Miura
Shinji Tanaka
Tomoyuki Tanikawa
Takeshi Kimura
Shigeyuki Kuboya
Tetsuya Suemitsu
Takashi Matsuoka
Keywords:
Leakage (electronics)
High-electron-mobility transistor
Materials science
Electronic engineering
Polar
Optoelectronics
gate leakage current
nitride semiconductors
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