Evidence of the Ge nonreactivity during the initial stage of SiGe oxidation
2009
Density functional theory calculations are used to identify preferential sites for oxygen adsorption on SiGe. It is shown that Ge atoms hinder O incorporation in their vicinity. Additionally, the silanone structure, known to be the key intermediate prior to silicon dioxide formation, is shown to be not favorable when close to a Ge site on the surface.
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