Investigation of performance limiting factors of sub-10nm III-V FinFETs
2015
As scaling of transistor continues, there is strong impetus to replace Si with attractive alternate channel materials like InGaAs that would provide high on-current at low voltages. However, many key technology issues need to be addressed and in this paper, we present a rigorous investigation into the performance limiting factors of III-V FinFETs using a 3D Monte-Carlo simulation methodology.
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