Synthesis of Ag-embedded SnS films by the RF method for photovoltaic applications

Abstract In this study, we report on the synthesis of SnS/Ag/SnS trilayer films for photovoltaic applications by the radio frequency (RF) sputtering method. The effect of the Ag thin film on the physical properties of the SnS film was systematically investigated. The SnS/Ag/SnS trilayer film solar cell obtained a higher short circuit current density (Jsc) of 17.13 mA/cm2 and a higher efficiency (ηmax) of 5.24% than those of the SnS film solar cell (Jsc = 14.21 mA/cm2, η = 3.23%). The improved photocurrent density (PCD) mainly resulted from the enhancement of the separation efficiency of photogenerated electron-hole pair and the decrease in trapping charge carriers in impurity centers as well as the reduction of the leakage current in the active region. These results could be useful for fabricating the next-generation photovoltaic device with high efficiency.